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www.kersemi.com 1 8/22/00 IRFR3707 smps mosfet hexfet ? power mosfet benefits v dss r ds(on) max i d 30v 13m ? 61a absolute maximum ratings symbol parameter max. units v ds drain-source voltage 30 v v gs gate-to-source voltage 20 v i d @ t c = 25 c continuous drain current, v gs @ 10v 61 i d @ t c = 70 c continuous drain current, v gs @ 10v 51 a i dm pulsed drain current 244 p d @t c = 25 c maximum power dissipation 87 w p d @t c = 70 c maximum power dissipation 61 w linear derating factor 0. 59 mw/ c t j , t stg junction and storage temperature range -55 to + 175 c parameter typ. max. units r jc junction-to-case ??? 1.73 r ja junction-to-ambient (pcb mount)* ??? 50 c/w r ja junction-to-ambient ??? 110 thermal resistance d-pak i-pak IRFR3707 irfu3707 irfu3707 ultra-low r ds(on) very low gate impedance fully characterized avalanche voltage and current high frequency dc-dc isolated converters with synchronous rectification for telecom and industrial use applications high frequency buck converters for computer processor power pd - 93934b
irfr/u3707 2 www.kersemi.com dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter typ. max. units e as single pulse avalanche energy ??? 213 mj i ar avalanche current ??? 61 a avalanche characteristics s d g diode characteristics 61 244 a symbol parameter min. typ. max. units conditions g fs forward transconductance 37 ??? ??? sv ds = 15v, i d = 49.6a q g total gate charge ??? 19 ??? i d = 24.8a q gs gate-to-source charge ??? 8.2 ??? nc v ds = 15v q gd gate-to-drain ("miller") charge ??? 6.3 ??? v gs = 4.5v q oss output gate charge ??? 18 27 v gs = 0v, v ds = 15v t d(on) turn-on delay time ??? 8.5 ??? v dd = 15v t r rise time ??? 78 ??? i d = 24.8a t d(off) turn-off delay time ??? 11.8 ??? r g = 1.8 ? t f fall time ??? 3.3 ??? v gs = 4.5v c iss input capacitance ??? 1990 ??? v gs = 0v c oss output capacitance ??? 707 ??? v ds = 15v c rss reverse transfer capacitance ??? 50 ??? pf ? = 1.0mhz v sd diode forward voltage symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. ??? 0.88 1.3 v t j = 25 c, i s = 31a, v gs = 0v ??? 0.8 ??? t j = 125 c, i s = 31a, v gs = 0v t rr reverse recovery time ??? 39 59 ns t j = 25 c, i f = 31a, v r =20v q rr reverse recovery charge ??? 49 74 nc di/dt = 100a/s t rr reverse recovery time ??? 42 63 ns t j = 125 c, i f = 31a, v r =20v q rr reverse recovery charge ??? 62 93 nc di/dt = 100a/s parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 ??? ??? vv gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.027 ??? v/ c reference to 25 c, i d = 1ma ??? 9.7 13 v gs = 10v, i d = 15a ??? 13.2 17.5 v gs = 4.5v, i d = 12a v gs(th) gate threshold voltage 1.0 ??? 3.0 v v ds = v gs , i d = 250a ??? ??? 20 a v ds = 24v, v gs = 0v ??? ??? 100 v ds = 24v, v gs = 0v, t j = 125 c gate-to-source forward leakage ??? ??? 200 v gs = 16v gate-to-source reverse leakage ??? ??? -200 na v gs = -16v static @ t j = 25 c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance m ?
irfr/u3707 www.kersemi.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , drain-to-source current (a) 3.5v 20s pulse width tj = 25 c vgs top 10.0v 9.0v 8.0v 7.0v 6.0v 5.0v 4.5v bottom 3.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , drain-to-source current (a) 3.5v 20s pulse width tj = 175 c vgs top 10.0v 9.0v 8.0v 7.0v 6.0v 5.0v 4.5v bottom 3.5v 10 100 1000 3.0 4.0 5.0 6.0 7.0 8.0 v = 15v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 61a
irfr/u3707 4 www.kersemi.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 0 500 1000 1500 2000 2500 3000 v , drain-to-source volta g e (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c rss c oss c iss 0 10 20 30 40 0 2 4 6 8 10 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs i = d 24.8a v = 15v ds 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 1 10 100 operation in this area limited by r ds ( on ) single pulse t t = 175 c = 25 c j c v , drain-to-source volta g e (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
irfr/u3707 www.kersemi.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. dut y factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse ( thermal response ) 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 t , case temperature ( c) i , drain current (a) c d limited by package
irfr/u3707 6 www.kersemi.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3
f 50k .2
f 12v current regulator same type as d.u.t. current sampling resistors + - v gs q g q gs q gd v g charge t p v ( br ) dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 14a&b. basic gate charge test circuit and waveforms 0 50 100 150 200 250 i d , drain current ( a ) 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 r ds ( on ) , drain-to-source on resistance ( ) vgs = 4.5v vgs = 10v 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v gs, gate -to -source voltage (v) 0.009 0.010 0.011 0.012 0.013 r ds(on) , drain-to -source on resistance ( ) i d = 31a 25 50 75 100 125 150 175 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 10.1a 20.7a 24.8a
irfr/u3707 www.kersemi.com 7 d-pak (to-252aa) package outline dimensions are shown in millimeters (inches) d-pak (to-252aa) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) m in . 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - s o u r c e 4 - d r a in 10.42 (.410) 9.40 (.370) notes: 1 d imension ing & tolerancin g per ansi y 14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r m s t o je d e c o u t lin e t o -252 a a . 4 dimensions show n are before solder dip, sold er d ip max. +0.16 (.006).
irfr/u3707 8 www.kersemi.com i-pak (to-251aa) package outline dimensions are shown in millimeters (inches) i-pak (to-251aa) part marking information 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010 ) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - source 4 - d r a in notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r ms to je d e c o u t lin e to -25 2a a . 4 d im e n s io n s s h o w n a r e b e f o r e s o l d e r d ip , solder dip max. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018)
irfr/u3707 www.kersemi.com 9 repetitive rating; pulse width limited by max. junction temperature. notes: starting t j = 25 c, l = 0.7 mh r g = 25 ? , i as = 24.8 a. pulse width 300s; duty cycle 2%. calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 m m 13 inch d-pak (to-252aa) tape & reel information dimensions are shown in millimeters (inches)

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